IEEE PELS Students and Young Professionals Symposium 2023
This talk provides an in-depth exploration of the switching reliability of gallium nitride (GaN) power transistors. Gallium nitride (GaN) devices are a necessary technology needed for advancing the efficiency, frequency, and form factor of power electronics. The material composition, architecture, and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in unique stability, reliability, and robustness issues facing GaN power devices. The current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance from the perspective of a power electronics engineer will be presented. Additionally, the necessary information for deploying GaN devices in the existing and emerging applications, will also be addressed.
Joseph Kozak, Johns Hopkins University Applied Physics Laboratory